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| Product Data Sheet Discrete MESFET TGF1350-SCC Key Features and Performance * * * * * 0.5 um x 300 um FET 1.5 dB Noise Figure with 11dB Associated Gain at 10 GHz 2.5 dB Noise Figure with 7 dB Associated Gain at 18 GHz All-gold Metallization for High Reliability Recessed Gate Structure Description The TriQuint TGF1350-SCC is a single-gate GaAs field-effect transistor (FET) used for low-noise applications DC to 18 GHz. Bond pad is gold plated for compatibility with thermocompression and thermosonic compatibility wire-bonding processes. The TGF1350-SCC is readily assembled using automated equipment. Die attach should be accomplished with conductive epoxy only. Eutectic attach is not recommended . TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 1 Product Data Sheet TGF1350-SCC TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 2 Product Data Sheet TGF1350-SCC TYPICAL S-PARAMETERS Frequency (GHz) S 11 MAG S 21 ANG () MAG ANG () S 12 MAG ANG () MAG S 22 ANG () 2 .0 2 .5 3 .0 3 .5 4 .0 4 .5 5 .0 5 .5 6 .0 6 .5 7 .0 7 .5 8 .0 8 .5 9 .0 9 .5 1 0 .0 1 0 .5 1 1 .0 1 1 .5 1 2 .0 1 2 .5 1 3 .0 1 3 .5 1 4 .0 1 4 .5 1 5 .0 1 5 .5 1 6 .0 1 6 .5 1 7 .0 1 7 .5 1 8 .0 0 .9 8 0 .9 6 0 .9 3 0 .9 3 0 .9 0 0 .8 9 0 .8 8 0 .8 7 0 .8 5 0 .8 3 0 .8 2 0 .8 2 0 .8 1 0 .8 1 0 .8 0 0 .7 9 0 .7 8 0 .7 8 0 .7 7 0 .7 8 0 .7 7 0 .7 7 0 .7 6 0 .7 5 0 .7 5 0 .7 4 0 .7 4 0 .7 4 0 .7 3 0 .7 2 0 .7 3 0 .7 3 0 .7 4 - 28 - 36 - 44 - 51 - 56 - 60 - 64 - 67 - 70 - 74 - 77 - 80 - 82 - 85 - 88 - 92 - 96 - 99 - 103 - 106 - 110 - 114 - 117 - 120 - 123 - 125 - 128 - 131 - 133 - 136 - 139 - 140 - 142 3 .2 2 3 .1 7 3 .0 7 2 .9 9 2 .8 8 2 .7 8 2 .7 3 2 .6 5 2 .5 5 2 .4 6 2 .3 6 2 .2 8 2 .2 2 2 .1 5 2 .1 2 2 .0 8 2 .0 5 2 .0 2 2 .0 0 1 .9 6 1 .9 0 1 .8 4 1 .7 9 1 .7 4 1 .6 9 1 .6 4 1 .5 6 1 .4 9 1 .4 3 1 .3 8 1 .3 6 1 .3 1 1 .2 6 157 151 146 141 137 133 129 125 121 118 116 113 110 107 104 101 98 95 92 88 84 81 79 76 73 69 65 61 59 57 54 52 50 0 .0 3 0 .0 4 0 .0 4 0 .0 5 0 .0 5 0 .0 5 0 .0 6 0 .0 6 0 .0 6 0 .0 6 0 .0 6 0 .0 6 0 .0 6 0 .0 6 0 .0 6 0 .0 6 0 .0 6 0 .0 6 0 .0 6 0 .0 6 0 .0 6 0 .0 6 0 .0 6 0 .0 6 0 .0 7 0 .0 7 0 .0 7 0 .0 7 0 .0 8 0 .0 8 0 .0 8 0 .0 9 0 .0 9 75 71 68 65 62 61 60 58 56 55 54 54 53 52 51 51 51 50 48 46 44 42 39 37 35 32 29 25 23 21 21 22 22 0 .7 1 0 .7 1 0 .7 1 0 .6 9 0 .6 8 0 .6 8 0 .6 7 0 .6 6 0 .6 6 0 .6 6 0 .6 6 0 .6 6 0 .6 6 0 .6 5 0 .6 5 0 .6 5 0 .6 5 0 .6 5 0 .6 5 0 .6 5 0 .6 5 0 .6 4 0 .6 4 0 .6 4 0 .6 4 0 .6 4 0 .6 5 0 .6 6 0 .6 5 0 .6 5 0 .6 6 0 .6 6 0 .6 6 - 12 - 14 - 14 - 16 - 17 - 19 - 24 - 28 - 30 - 31 - 32 - 32 - 33 - 34 - 38 - 40 - 43 - 45 - 48 - 51 - 54 - 56 - 58 - 60 - 64 - 69 - 74 - 78 - 81 - 81 - 81 - 82 - 83 TA = 25oC, VDS = 3 V, IDS = 15mA Reference planes for S-parameter data are located at center of gate and drain bond pads. Three 0.7 mil diameter wires, approximately 13 mils long, are bonded from the center of each of the source pads to ground. The S-parameters are also available on floppy disk and the world wide web. TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 3 Product Data Sheet TGF1350-SCC RF CHARACTERISTICS NF MIN GA P ARAMETER TES T CONDITIONS TYP UNIT Min im u m n o is e fig u re As s o ciat ed g ain 1 0 GHz 1 8 GHz 1 0 GHz 1 8 GHz 1 .5 2 .5 11 7 dB VDS = 3 V, IDS = 15mA, TA = 25OC DC CHARACTERISTICS P ARAMETER TES T CONDITIONS MIN TYP MAX UNIT V (BR)GDO Gat e-d rain b reak d o wn vo lt ag e V (BR)GSO Gat e-s o u rce b reak d o wn vo lt ag e V GS(OFF) I DSS GM Gat e-s o u rce cu t o ff (p in ch -o ff) vo lt ag e Zero -g at e-vo lt ag e d rain cu rren t at s at u rat io n DC t ran s co n d u ct an ce I GS = 1 .0 m A p er m m I GD = 1 .0 m A p er m m V DS = V DSS* I D = 0 .5 m A p er m m V DS = 0 .5 V t o 3 .5 V** V GS = 0 V DS = 0 .5 V t o V DSS* V GS = - 0 .2 5 V -6 -6 - 0 .5 - 1 .2 - 3 30 40 50 50 100 78 V V V mA mA TA = 25OC *VDSS = VDS @ IDSS **VDS for IDSS is the drain voltage between 0.5V and 3.5V at which drain current is highest. EQUIVALENT SCHEMATIC TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com 4 Product Data Sheet TGF1350-SCC TYPICAL MODEL PARAMETERS P ARAMETER VALUE S TANDARD DEVIATION UNIT rs rd rg gm rds ri Cgs Cgd Cds So u rce res is t an ce Drain res is t an ce Gat e res is t an ce Tran s co n d u ct an ce Drain -t o -s o u rce res is t an ce In p u t res is t an ce Gat e-t o -s o u rce cap acit an ce Gat e-t o -d rain cap acit an ce Drain -t o -s o u rce cap acit an ce Tim e co n s t an t 5 .6 2 4 .4 8 4 .6 8 5 2 .3 2 224 1 .3 0 0 .3 5 1 0 .0 1 5 9 0 .0 8 7 7 2 .3 3 0 .6 0 .4 0 .5 6 40 1 0 .0 2 7 0 .0 0 3 7 0 .0 0 9 5 0 .1 mS pF pF pF ps GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handing, assembly and test. 5 TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com |
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